Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings Ta = 25°C Par.
• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
www.DataSheCeto4lUle.cctoorm-base voltage 2SD1266 VCBO
60
V
(Emitter open)
2SD1266A
80
Collector-emitter voltage 2SD1266 VCEO
60
V
(Base open)
2SD1266A
80
Emitter-base voltage (Collector open) VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
5
A
Collector power
TC = 25°C PC
35
W
dissipat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D1266 |
Panasonic Semiconductor |
2SD1266 | |
2 | D1260UK |
Seme LAB |
METAL GATE RF SILICON FET | |
3 | D1262 |
Panasonic |
2SD1262 | |
4 | D1262A |
Panasonic |
2SD1262A | |
5 | D1263A |
Panasonic Semiconductor |
2SD1263A | |
6 | D1264 |
Panasonic Semiconductor |
2SD1264 | |
7 | D1264 |
NEC |
2SD1264 | |
8 | D1265 |
SavantIC |
2SD1265 | |
9 | D1265C5 |
Infineon |
SiC Schottky Barrier diodes | |
10 | D1265C6 |
Infineon |
650V SiC Schottky Diode | |
11 | D1267 |
Panasonic Semiconductor |
2SD1267 | |
12 | D126A |
ETC |
Power Rectifier Diodes |