www.data·sWheietht4uT.cOom-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For audio frequency power applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage 2SD.
PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2SD1265 2SD1265A IC=0.2A , L=25mH VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A VBE Base-emitter on voltage IC=1A ; VCE=3V ICBO Collector cut-off current VCB=20V; IE=0 IEBO Emitter cut-off current VEB=8V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=3V hFE-2 DC current gain IC=1A ; VCE=3V MIN TYP. MAX UNIT 60 V 80 1.0 V 1.2 V 30 µA 1 mA 40 30 160 hFE-2 Classifications QPO 30-60 500-100 80-160 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com Product Spe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D1260UK |
Seme LAB |
METAL GATE RF SILICON FET | |
2 | D1262 |
Panasonic |
2SD1262 | |
3 | D1262A |
Panasonic |
2SD1262A | |
4 | D1263A |
Panasonic Semiconductor |
2SD1263A | |
5 | D1264 |
Panasonic Semiconductor |
2SD1264 | |
6 | D1264 |
NEC |
2SD1264 | |
7 | D1265C5 |
Infineon |
SiC Schottky Barrier diodes | |
8 | D1265C6 |
Infineon |
650V SiC Schottky Diode | |
9 | D1266 |
Panasonic Semiconductor |
2SD1266 | |
10 | D1266A |
Panasonic Semiconductor |
2SD1266A | |
11 | D1267 |
Panasonic Semiconductor |
2SD1267 | |
12 | D126A |
ETC |
Power Rectifier Diodes |