D1266 - Panasonic Semiconductor

D1266 2SD1266

Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s A.

Features

q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SD1266 60 VCBO V base voltage 2SD1266A 80 Collector to 2SD1266 60 VCEO V emitter voltage 2SD1266A 80 Emitter to base voltage VEBO 6 V Peak collector current ICP 5 A Collector current IC 3 A Collector power TC=25°C dissipation Ta=25°C PC 35 W 2 Junction temperature Storage tempera.