Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB939 and 2SB939A 8.5±0.2 6.0±0.5 Unit: mm 3.4±0.3 1.0±0.1 10.0±0.3 1.5±0.1 s Features q High foward current transfer ratio hFE q High-speed switching q N type package enabling direct soldering of the radiating fin .
q High foward current transfer ratio hFE q High-speed switching q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1262 base voltage 2SD1262A
VCBO
60 80
Collector to 2SD1262 emitter voltage 2SD1262A
VCEO
60 80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO ICP IC
PC
7 12 8 45 1.3
Junction temperature Storage temperature
Tj 150 Tstg
–55 to +150
Unit V
V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D1260UK |
Seme LAB |
METAL GATE RF SILICON FET | |
2 | D1262A |
Panasonic |
2SD1262A | |
3 | D1263A |
Panasonic Semiconductor |
2SD1263A | |
4 | D1264 |
Panasonic Semiconductor |
2SD1264 | |
5 | D1264 |
NEC |
2SD1264 | |
6 | D1265 |
SavantIC |
2SD1265 | |
7 | D1265C5 |
Infineon |
SiC Schottky Barrier diodes | |
8 | D1265C6 |
Infineon |
650V SiC Schottky Diode | |
9 | D1266 |
Panasonic Semiconductor |
2SD1266 | |
10 | D1266A |
Panasonic Semiconductor |
2SD1266A | |
11 | D1267 |
Panasonic Semiconductor |
2SD1267 | |
12 | D126A |
ETC |
Power Rectifier Diodes |