D1260UK - Seme LAB

D1260UK METAL GATE RF SILICON FET

TetraFET D1260UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D (2 pls) C E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 12.5V – 175MHz SINGLE ENDED PIN 1 PIN 3 PIN 5 H I FM K DT SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN JN GATE SOURCE (COMMON) DIM mm A 6.35 DIA B 3.17 DIA C 18.41 D 5.4.

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 10 dB MINIMUM APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 175W BVDSS Drain
  – Source Breakdown Voltage 40V BVGSS Gate
  – Source Breakdown Voltage ±20V ID(sat) Drain Current 40A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package.