Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q 7.5±0.2 Solder Dip 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Coll.
q q q
7.5±0.2 Solder Dip 4.0 14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1267 2SD1267A 2SD1267 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 60 80 60 80 5 8 4 40 2 150
–55 to +150 Unit V
emitter voltage 2SD1267A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
16.7±0.3
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D1260UK |
Seme LAB |
METAL GATE RF SILICON FET | |
2 | D1262 |
Panasonic |
2SD1262 | |
3 | D1262A |
Panasonic |
2SD1262A | |
4 | D1263A |
Panasonic Semiconductor |
2SD1263A | |
5 | D1264 |
Panasonic Semiconductor |
2SD1264 | |
6 | D1264 |
NEC |
2SD1264 | |
7 | D1265 |
SavantIC |
2SD1265 | |
8 | D1265C5 |
Infineon |
SiC Schottky Barrier diodes | |
9 | D1265C6 |
Infineon |
650V SiC Schottky Diode | |
10 | D1266 |
Panasonic Semiconductor |
2SD1266 | |
11 | D1266A |
Panasonic Semiconductor |
2SD1266A | |
12 | D126A |
ETC |
Power Rectifier Diodes |