CSD23382F4 - Texas Instruments

CSD23382F4 P-Channel Power MOSFET

This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . Typical Part Dimensions 0.35 mm Product Summary TA = 25°C VDS Drain-to-Source Voltage .

Features

•1 Low On-Resistance
• Ultra-Low Qg and Qgd
• Ultra-Small Footprint (0402 Case Size)
  – 1.0 mm × 0.6 mm
• Low Profile
  – 0.35 mm Max Height
• Integrated ESD Protection Diode
  – Rated >2 kV HBM
  – Rated >2 kV CDM
• Pb Terminal Plating
• Halogen Free
• RoHS Compliant 2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching Applications
• Battery Applications
• Handheld and Mobile Applications 3 Description This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology i.