CSD23202W10 - Texas Instruments

CSD23202W10 P-Channel Power MOSFET

This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile. . Top View D D G S P0097-01 . . . . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) .

Features

•1 Ultra-Low Qg and Qgd
• Small Footprint 1 mm × 1 mm
• Low Profile 0.62-mm Height
• Pb Free
• Gate ESD Protection
  – 3 kV
• RoHS Compliant
• Halogen Free 2 Applications
• Battery Management
• Load Switch
• Battery Protection 3 Description This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile. . Top View D D G S P0097-01 . . . . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (
  –4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) D.