This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. Top View D S G D S S Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-.
•1 Ultra-Low Qg and Qgd
• Low RDS(on)
• Small Footprint
• Low Profile 0.62-mm Height
• Lead Free
• RoHS Compliant
• Halogen Free
• CSP 1-mm × 1.5-mm Wafer Level Package
2 Applications
• Battery Management
• Load Switch
• Battery Protection
3 Description
This 16.2-mΩ,
–8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.
Top View
D
S
G
D
S
S
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (
–4.5 V)
Qgd
Gate Charge Gate-to-Drain
R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD23203WT |
Texas Instruments |
P-Channel Power MOSFET | |
2 | CSD23201W10 |
Texas Instruments |
P-Channel Power MOSFET | |
3 | CSD23202W10 |
Texas Instruments |
P-Channel Power MOSFET | |
4 | CSD23202W10T |
Texas Instruments |
P-Channel Power MOSFET | |
5 | CSD23280F3 |
Texas Instruments |
P-Channel Power MOSFET | |
6 | CSD23280F3T |
Texas Instruments |
P-Channel Power MOSFET | |
7 | CSD23381F4 |
Texas Instruments |
P-Channel Power MOSFET | |
8 | CSD23381F4T |
Texas Instruments |
P-Channel Power MOSFET | |
9 | CSD23382F4 |
Texas Instruments |
P-Channel Power MOSFET | |
10 | CSD23382F4T |
Texas Instruments |
P-Channel Power MOSFET | |
11 | CSD20060 |
ETC |
ZERO RECOVERY RECTIFIER | |
12 | CSD20060D |
ETC |
ZERO RECOVERY RECTIFIER |