CSD23381F4 - Texas Instruments

CSD23381F4 P-Channel Power MOSFET

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage –12 Qg Gate Ch.

Features

• Ultra-Low On-Resistance
• Ultra-Low Qg and Qgd
• High Operating Drain Current
• Ultra-Small Footprint (0402 Case Size)
  – 1.0 mm × 0.6 mm
• Ultra-Low Profile
  – 0.35 mm Max Height
• Integrated ESD Protection Diode
  – Rated >4 kV HBM
  – Rated >2 kV CDM
• Lead and Halogen Free
• RoHS Compliant 2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching Applications
• Battery Applications
• Handheld and Mobile Applications 3 Description This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mob.