This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile. . Top View D D G S P0097-01 . . . . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) .
•1 Ultra-Low Qg and Qgd
• Small Footprint 1 mm × 1 mm
• Low Profile 0.62-mm Height
• Pb Free
• Gate ESD Protection
– 3 kV
• RoHS Compliant
• Halogen Free
2 Applications
• Battery Management
• Load Switch
• Battery Protection
3 Description
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
.
Top View
D
D
G
S
P0097-01
.
.
.
.
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (
–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on)
D.
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1 | CSD23202W10 |
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2 | CSD23201W10 |
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3 | CSD23203W |
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5 | CSD23280F3 |
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7 | CSD23381F4 |
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8 | CSD23381F4T |
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9 | CSD23382F4 |
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10 | CSD23382F4T |
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11 | CSD20060 |
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12 | CSD20060D |
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