CSD23280F3T - Texas Instruments

CSD23280F3T P-Channel Power MOSFET

This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Q.

Features

•1 Low On-Resistance
• Ultra-Low Qg and Qgd
• High-Operating Drain Current
• Ultra-Small Footprint
  – 0.73 mm × 0.64 mm
• Ultra-Low Profile
  – 0.35-mm Max Height
• Integrated ESD Protection Diode
  – Rated > 4-kV HBM
  – Rated > 2-kV CDM
• Lead and Halogen Free
• RoHS Compliant 2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching Applications
• Battery Applications
• Handheld and Mobile Applications 3 Description This
  –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This.