CSD23203WT - Texas Instruments

CSD23203WT P-Channel Power MOSFET

This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. Top View D S G D S S Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-.

Features

•1 Ultra-Low Qg and Qgd
• Low RDS(on)
• Small Footprint
• Low Profile 0.62-mm Height
• Lead Free
• RoHS Compliant
• Halogen Free
• CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications
• Battery Management
• Load Switch
• Battery Protection 3 Description This 16.2-mΩ,
  –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. Top View D S G D S S Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (
  –4.5 V) Qgd Gate Charge Gate-to-Drain R.