CSD23201W10 - Texas Instruments

CSD23201W10 P-Channel Power MOSFET

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View D D G S PRODUCT SUMMARY VDS Drain to Source Voltage –12 V Qg Gate Charge Total (4.5V) 1.8 nC Qgd Gate Charge Gate to Drain 0.26 nC VGS = –1.5V 110 mΩ RDS(.

Features

1
• Ultra Low Qg and Qgd
• Small Footprint 1mm × 1mm
• Low Profile 0.62mm Height
• Pb Free
• Gate ESD Protection
  – 3kV
• RoHS Compliant
• Halogen Free APPLICATIONS
• Battery Management
• Load Switch
• Battery Protection DESCRIPTION The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View D D G S PRODUCT SUMMARY VDS Drain to Source Voltage
  –12 V Qg Gate Charge Total (4.5V) 1.8 nC Qgd Gate Charge Gate to Drain 0.26 nC VGS =
  –1.5V 110 mΩ RDS(on) Drai.