CHA6518 - United Monolithic Semiconductors

CHA6518 5 - 18 GHz High Power Amplifier

The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side are gold plate.

Features

n n n n n n 0.25 µm Power pHEMT Technology 5
  – 18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.07 mm Vg Vd 50Ω IN Input matching Interstage Stage 1 / Stage 2 Interstage Stage 2 / Stage 3 Output 50Ω combiner OUT Vd Vg Vd Vg Vd Vd = 8 V Main Characteristics Tamb = +25°C (Tamb is the back-side of the chip) Symbol Parameter F_op P_sat G_lin Operating frequency range Saturated output power Linear gain Min 5 Typ 33.5 24 Max 18 Unit GHz dBm dB Ref. : DSCHA65185007 - 7 Jan 05 1/8 Specifications subject to cha.