The CHA6194-QXG is a four stage monolithic GaAs high power circuit producing 1.2 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point To Point Radio or K-band Sat-Com application. The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is su.
■ Broadband performances: 37-40GHz
■ 31dBm saturated power
■ 38dBm OIP3
■ 20dB gain
■ DC bias: Vd = 6.0Volt @ Id = 0.8A
■ QFN5x6
■ MSL3
Output power (dBm)
Output power vs frequency
35
34
33
32
31
30
29
28
P1dB
Psat
27
26
25 36 37 38 39 40
Frequency (GHz)
41
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
Psat Saturated output power
OIP3 Output IP3
Min Typ Max .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA6105 |
United Monolithic Semiconductors |
8-12GHz Driver Amplifier | |
2 | CHA6005-99F |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
3 | CHA6005-QEG |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
4 | CHA6015-99F |
United Monolithic Semiconductors |
2-8GHz High Power Amplifier | |
5 | CHA6042 |
United Monolithic Semiconductors |
13-16GHz High Power Amplifier | |
6 | CHA6250-QFG |
United Monolithic Semiconductors |
5.5-9GHz Power Amplifier | |
7 | CHA6252-QFG |
United Monolithic Semiconductors |
13-15.5GHz Power Amplifier | |
8 | CHA6356-QXG |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
9 | CHA6358-99F |
United Monolithic Semiconductors |
27-31.5GHz High Power Amplifier | |
10 | CHA6362-QXG |
United Monolithic Semiconductors |
17.7 - 19.7GHz Power Amplifier | |
11 | CHA6517 |
United Monolithic Semiconductors |
6 - 18 GHz High Power Amplifier | |
12 | CHA6518 |
United Monolithic Semiconductors |
5 - 18 GHz High Power Amplifier |