The CHA6252-QFG is a four stages monolithic GaAs high power circuit that produces more than 2 Watt output power. It is designed for commercial communication systems. The circuit is manufactured with a pHEMT process, 0.5µm gate length. Main Features 36 Output power at 1dB comp. 35 OP1dB (dB) @3 Temperatures ■ Broadband performances: 13-15.5GHz ■ 22dB Linea.
36
Output power at 1dB comp.
35
OP1dB (dB) @3 Temperatures
■ Broadband performances: 13-15.5GHz
■ 22dB Linear Gain
■ 32.5dBm output power @1dB comp.
■ 41dBm output TOI
■ 22% PAE@1dB compression
■ DC bias: Vd=7Volt @ Id=1.1A
■ 32L-QFN5x5
34 33 32 31 30 29 28 27 26
Temp=25°C Temp=-40°C Temp=+85°C
12
12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OTOI Output TOI Pout Output Power @1dB comp. Min 13 Typ 22 41.0 32.5 Max 15.5 Unit GHz dB dBm dBm
Ref. : DSCHA6252-QFG2355 - 20 Dec 12
1/.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA6250-QFG |
United Monolithic Semiconductors |
5.5-9GHz Power Amplifier | |
2 | CHA6005-99F |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
3 | CHA6005-QEG |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
4 | CHA6015-99F |
United Monolithic Semiconductors |
2-8GHz High Power Amplifier | |
5 | CHA6042 |
United Monolithic Semiconductors |
13-16GHz High Power Amplifier | |
6 | CHA6105 |
United Monolithic Semiconductors |
8-12GHz Driver Amplifier | |
7 | CHA6194-QXG |
United Monolithic Semiconductors |
37-40GHz Power Amplifier | |
8 | CHA6356-QXG |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
9 | CHA6358-99F |
United Monolithic Semiconductors |
27-31.5GHz High Power Amplifier | |
10 | CHA6362-QXG |
United Monolithic Semiconductors |
17.7 - 19.7GHz Power Amplifier | |
11 | CHA6517 |
United Monolithic Semiconductors |
6 - 18 GHz High Power Amplifier | |
12 | CHA6518 |
United Monolithic Semiconductors |
5 - 18 GHz High Power Amplifier |