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CHA6518 |
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| Part Number | CHA6518 |
| Manufacturer | United Monolithic Semiconductors |
| Description | The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through... |
| Features |
n n n n n n 0.25 µm Power pHEMT Technology 5 – 18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.07 mm Vg Vd 50Ω IN Input matching Interstage Stage 1 / Stage 2 Interstage Stage 2 / Stage 3 Output 50Ω combiner OUT Vd Vg Vd Vg Vd Vd = 8 V Main Characteristics Tamb = +25°C (Tamb is the back-side of the chip) Symbol Parameter F_op P_sat G_lin Operating frequency range Saturated output power Linear gain Min 5 Typ 33.5 24 Max 18 Unit GHz dBm dB Ref. : DSCHA65185007 - 7 Jan 05 1/8 Specifications subject to cha... |
| Document |
 CHA6518 Data Sheet
PDF 353.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CHA6517 |
United Monolithic Semiconductors |
6 - 18 GHz High Power Amplifier |
|
| 2 | CHA6550-QXG |
United Monolithic Semiconductors |
17.0 - 23.6GHz Power Amplifier |
|
| 3 | CHA6552-QJG |
United Monolithic Semiconductors |
GaAs Monolithic Microwave |
|
| 4 | CHA6558-99F |
United Monolithic Semiconductors |
28-32GHz HPA 2W |
|
| 5 | CHA6005-99F |
United Monolithic Semiconductors |
GaAs Monolithic Microwave |
|