CHA6517 - United Monolithic Semiconductors

CHA6517 6 - 18 GHz High Power Amplifier

The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the assembly process: • the backside of the chip is both RF and DC grounded • bond pads and back side a.

Features

0.25 µm Power pHEMT Technology 6
  – 18 GHz Frequency Range 32dBm Output Power per channel Compatible for balanced configuration 22dB nominal Gain Quiescent Bias point : 600mA @ 8V per channel Chip size: 4.32 x 3.90 x 0.07 mm INPUT A OUTPUT A Vd1 Vd2 Vd3 INPUT B OUTPUT B Vg Vd3 Main Characteristics Tamb = +25° C (Tamb is the back-side of the chip) Symbol F_op Psat G_lin Parameter Operating frequency range Saturated output power Linear gain Min 6 30 19 32 22 Typ Max 18 Unit GHz dBm dB Ref. : DSCHA6517-8205 - 25 Jun 08 1/10 Specifications subject to change without notice United Monolit.