CHA6552-QJG - United Monolithic Semiconductors

CHA6552-QJG GaAs Monolithic Microwave

The CHA6552-QJG is a three stage monolithic GaAs high power circuit producing YYWWG 4 Watt output power. UMS A366878A UMSUMS A366878AIt is designed for Point to Point radio and A6Y5Y52WWG commercial communication systems. YYWWGThe circuit is manufactured with a pHEMT YYWWAU36M6878SA process, 0.5µm gate length. SMU A786863A GWWYY SMU A786863A GWW.

Features

40
■ Broadband performances: 5.8- 8.5GHz 39
■ 36dBm saturated power 38
■ 35dBm at 1dB compression
■ 22dB gain
■ DC bias: Vd = 7.0Volt @ Id = 1.8A
■ QFN6x6 UMS
■MSL3 37 36 35 34 33 32 31 30 5 Pout & PAE versus frequency P-1dB at 1.8 A Psat at 1.8 A PAE at 1.8A 6789 Frequency (GHz) 40 38 36 34 32 30 28 26 24 22 20 10 Pout (dBm) PAE at 1dB comp. ( %) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 5.8 8.5 GHz A3687AGain Psat OIP3 Linear Gain Saturated output power Output IP3 22 dB 36 dBm 45 dBm Ref. : DSCHA6552-QJG4147 - 27 M.