The CHA6250-QFG is a three stages monolithic GaAs high power circuit that produces more than 2 Watt output power. It is designed for commercial communication systems. The circuit is manufactured with a pHEMT process, 0.5µm gate length. Main Features ■ Broadband performances: 5.5- 9GHz ■ 23.5dB Linear Gain ■ 33.5dBm output power @1dB comp. ■ 43dBm output TOI.
■ Broadband performances: 5.5- 9GHz
■ 23.5dB Linear Gain
■ 33.5dBm output power @1dB comp.
■ 43dBm output TOI
■ 29% PAE@ 1dB compression
■ DC bias: Vd=7Volt@Id=0.9A
■ 32L-QFN5x5
36
Output power at 1dB comp.
35
34
Output P1dB (dB)
33 32 31
Temp=25°C Temp=-40°C Temp=+85°C
30
29 28 5 5.5 6 6.5 7 7.5 8 8.5
9
9.5
10
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OTOI Output TOI Pout Output Power @1dB comp. Min 5.5 Typ 23.5 43.0 33.5 Max 9.0 Unit GHz dB dBm dBm
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
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Specifications su.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA6252-QFG |
United Monolithic Semiconductors |
13-15.5GHz Power Amplifier | |
2 | CHA6005-99F |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
3 | CHA6005-QEG |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
4 | CHA6015-99F |
United Monolithic Semiconductors |
2-8GHz High Power Amplifier | |
5 | CHA6042 |
United Monolithic Semiconductors |
13-16GHz High Power Amplifier | |
6 | CHA6105 |
United Monolithic Semiconductors |
8-12GHz Driver Amplifier | |
7 | CHA6194-QXG |
United Monolithic Semiconductors |
37-40GHz Power Amplifier | |
8 | CHA6356-QXG |
United Monolithic Semiconductors |
GaAs Monolithic Microwave | |
9 | CHA6358-99F |
United Monolithic Semiconductors |
27-31.5GHz High Power Amplifier | |
10 | CHA6362-QXG |
United Monolithic Semiconductors |
17.7 - 19.7GHz Power Amplifier | |
11 | CHA6517 |
United Monolithic Semiconductors |
6 - 18 GHz High Power Amplifier | |
12 | CHA6518 |
United Monolithic Semiconductors |
5 - 18 GHz High Power Amplifier |