CHA6558-99F - United Monolithic Semiconductors

CHA6558-99F 28-32GHz HPA 2W

The CHA6558-99F is a monolithic four stages GaAs high power amplifier, designed for Ka-Band applications. The circuit is dedicated to telecommunication and VSAT, SATCOM and is also well suited for a wide range of microwave applications and systems. It is developed on a robust 0.15µm gate length pHEMT process, via holes through the substrate, air bridges and .

Features

Linear gain (dB) / Output Power (dBm) & PAE (%) @ saturation (dBm)
■ Broadband performances: 28-32GHz
■ 21dB Linear Gain
■ 33dBm output power @3dB compression.
■ 23% PAE@ 3dB compression
■ DC bias: Vd=6Volt@Id=1.4A
■ Chip size 3.46x2.71x0.07mm 39 37 35 33 31 29 27 25 Pout @Saturation PAE @Saturation 23 21 19 Linear Gain 17 15 28 29 30 Frequency (GHz) 31 32 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 28 32 GHz Gain Linear Gain 21 dB Pout Output Power @3dB compression 33 dBm PAE Power added efficiency 23 % ESD Protection: Electrosta.