The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main.
Broad band performance 36-44GHz 3dB noise figure 19dB gain, ± 0.5dB gain flatness Low DC power consumption, 45mA 20dBm 3rd order intercept point Chip size : 1.670 x 0.970x 0.1mm Main Characteristics Tamb = +25°C 28 25,00 26 24 22 20 18 15,00 16 14 12 10 8 5,00 6 4 2 0 -2 -5,00 -4 -6 -8 -10 -12 -15,00 -14 -16 -18 dBS21 NF dBS11 dBS22 -20 -22 -25,00 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 Frequency ( GHz ) On wafer typical measurement Symbol Parameter NF Noise figure at freq : 40GHz G Gain .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA2190 |
United Monolithic Semiconductors |
20-30GHz Low Noise Amplifier | |
2 | CHA2192 |
United Monolithic Semiconductors |
24-26.5GHz Low Noise Amplifier | |
3 | CHA2193 |
United Monolithic Semiconductors |
20-30GHz Low Noise Amplifier | |
4 | CHA2110-98F |
United Monolithic Semiconductors |
7-12GHz LNA | |
5 | CHA2110-QDG |
United Monolithic Semiconductors |
7-12 GHz LNA | |
6 | CHA2157 |
United Monolithic Semiconductors |
55-60GHz Low Noise / Medium Power Amplifier | |
7 | CHA2159 |
United Monolithic Semiconductors |
55-65GHz Low Noise / Medium Power Amplifier | |
8 | CHA2063A |
United Monolithic Semiconductors |
7-13GHz Low Noise Amplifier | |
9 | CHA2066 |
United Monolithic Semiconductors |
10-16GHz Low Noise Amplifier | |
10 | CHA2069 |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier | |
11 | CHA2069-99F |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier | |
12 | CHA2069-FAA |
United Monolithic Semiconductors |
16-32GHz Low Noise Amplifier |