CHA2069-FAA - United Monolithic Semiconductors

CHA2069-FAA 16-32GHz Low Noise Amplifier

The CHA2069-FAA is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package. The overall power supply is of 4..

Features

■ Broadband performance 16-32GHz
■ 2.5dB typical Noise Figure
■ 20dBm 3rd order intercept point
■ 22dB gain
■ Low DC power consumption
■ 6x6mm² metal ceramic hermetic package Linear Gain 30 25 20 15 10 5 0 10 +25 C -40 C +85 C 15 20 25 30 Frequency (GHz) 35 40 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 16 32 GHz NF Noise figure 2.5 dB G Small signal Gain 22 dB ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA2069-FAA2356 - 21 Dec 12 1/10 Specifications subj.