CHA2069 - United Monolithic Semiconductors

CHA2069 18-31GHz Low Noise Amplifier

The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features ¦ Broad band performance 18-31GHz ¦ 2.5dB noise figure ¦ 22dB gain, ± 1dB .

Features

¦ Broad band performance 18-31GHz ¦ 2.5dB noise figure ¦ 22dB gain, ± 1dB gain flatness ¦ Low DC power consumption, 55mA ¦ 20dBm 3rd order intercept point ¦ Chip size : 2,170 x 1,270x 0.1mm 24 22 20 18 16 14 12 10 8 6 4 2 0 14 16 18 20 22 24 26 28 30 32 34 Frequency ( GHz ) On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol Parameter NF Noise figure,18-31GHz G Gain ∆G Gain flatness Min Typ Max Unit 2.5 3.5 dB 18 22 dB ± 1 ± 1.5 dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA20679273 - 8-Sep-99 1/8 Spe.