CHA2193 - United Monolithic Semiconductors

CHA2193 20-30GHz Low Noise Amplifier

The CHA2193 is a three stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges .

Features

■ 2.0 dB noise figure
■ 18 dB ± 1dB gain
■ 8 dBm output power (-1dB gain comp.)
■ Very good broadband input matching
■ DC power consumption, 60mA @ 3.5V
■ Chip size : 2.07 x 1.03 x 0.10 mm 20 18 Gain (dB) 16 14 12 10 8 6 4 NF (dB) 2 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 Frequency ( GHz ) Typical on Wafer Measurements Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal gain NF Noise figure P1dB Output power at 1dB gain compression Id Bias current Min 20 16 6 Typ Max Unit 30 GHz 18 dB 2.0 2.5 dB 8 dBm 60 100 mA ESD Protection : Electr.