CHA2066 - United Monolithic Semiconductors

CHA2066 10-16GHz Low Noise Amplifier

The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. A B C D E NC G1 7272 NC G2 Vd RFin RFout UMS Main Features Gain ( dB ) 20 18 16 14 12 10 8 6 4 2 .

Features

Gain ( dB ) 20 18 16 14 12 10 8 6 4 2 0 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz ) 5 Noise Figure ( dB )
■ Broad band performance 10-16GHz
■ 2.0dB noise figure, 10-16GHz
■ 16dB gain, ± 0.5dB gain flatness
■ Low DC power consumption, 50mA
■ 20dBm 3rd order intercept point
■ Chip size : 1,52 x 1,08 x 0.1mm 4 3 2 1 0 On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol NF G ∆G Parameter Noise figure, 10-16GHz Gain Gain flatness 14 Min Typ 2.0 16 ± 0.5 ± 1.0 Max 2.5 Unit dB dB dB ESD Protections : Electrostatic discharge sensitive device observe handling.