The CHA2157 is a two stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrat.
■ 3.5 dB noise figure
■ 10 dB ± 1dB gain
■ 15 dBm output power @ -1dB gain comp.
■ DC power consumption, 80mA @ 3.3V
■ Chip size: 1.71 x 1.04 x 0.10 mm
Gain & Rloss (dB)
15 10 5 0 -5 -10 -15 -20
55
Gain S11
56 57 58 Frequency (GHz)
S22
59
Typical on Wafer Measurements
60
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal gain
NF Noise figure
P1dB Output power at.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA2159 |
United Monolithic Semiconductors |
55-65GHz Low Noise / Medium Power Amplifier | |
2 | CHA2110-98F |
United Monolithic Semiconductors |
7-12GHz LNA | |
3 | CHA2110-QDG |
United Monolithic Semiconductors |
7-12 GHz LNA | |
4 | CHA2190 |
United Monolithic Semiconductors |
20-30GHz Low Noise Amplifier | |
5 | CHA2192 |
United Monolithic Semiconductors |
24-26.5GHz Low Noise Amplifier | |
6 | CHA2193 |
United Monolithic Semiconductors |
20-30GHz Low Noise Amplifier | |
7 | CHA2194 |
United Monolithic Semiconductors |
36-44GHz Low Noise Amplifier | |
8 | CHA2063A |
United Monolithic Semiconductors |
7-13GHz Low Noise Amplifier | |
9 | CHA2066 |
United Monolithic Semiconductors |
10-16GHz Low Noise Amplifier | |
10 | CHA2069 |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier | |
11 | CHA2069-99F |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier | |
12 | CHA2069-FAA |
United Monolithic Semiconductors |
16-32GHz Low Noise Amplifier |