CHA2110-98F - United Monolithic Semiconductors

CHA2110-98F 7-12GHz LNA

The CHA2110-98F is a monolithic two-stages wide band low noise amplifier circuit. It is self-biased. It is designed for military, space and telecommunication systems. VD1 VD2 The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, and air bridges. IN It is available in chip form. OUT Main Features ■ Broadb.

Features

■ Broadband performances: 7-12GHz
■ Linear gain: 19dB
■ Return Losses: 12dB
■ Noise Figure: 1.2dB
■ Output power @ 1dBcomp: 11dBm
■ DC bias: Vd=4 Volt@Id=45mA
■ Chip size 1.93x1.3x0.1mm 25 5.0 24 4.5 23 4.0 22 3.5 21 20 S21 3.0 2.5 19 2.0 18 1.5 17 NF 1.0 16 0.5 15 0.0 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz) Gain and NF versus frequency Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp (f=10GHz) Min Typ Max Unit 7 12 GHz 19 dB 1.2 dB 11 dBm Ref. : DSCHA21.