The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and.
■ 1.8 dB noise figure
■ 15 dB ± 1dB gain
■ 10 dBm output power
■ Very good broadband input matching
■ DC power consumption, 40mA @ 3.5V
■ Chip size : 1.67 x 0.97 x 0.10 mm
Gain & NF ( dB )
20 18 16 Gain 14 12 10
8 6 4 NF 2 0
16 18 20 22 24 26 28 30 32 34 Frequency ( GHz )
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Fop G NF P1dB
Parameter
Operating frequency range Small signal gain Noise figure
Output power at 1dB gain compression.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA2190 |
United Monolithic Semiconductors |
20-30GHz Low Noise Amplifier | |
2 | CHA2193 |
United Monolithic Semiconductors |
20-30GHz Low Noise Amplifier | |
3 | CHA2194 |
United Monolithic Semiconductors |
36-44GHz Low Noise Amplifier | |
4 | CHA2110-98F |
United Monolithic Semiconductors |
7-12GHz LNA | |
5 | CHA2110-QDG |
United Monolithic Semiconductors |
7-12 GHz LNA | |
6 | CHA2157 |
United Monolithic Semiconductors |
55-60GHz Low Noise / Medium Power Amplifier | |
7 | CHA2159 |
United Monolithic Semiconductors |
55-65GHz Low Noise / Medium Power Amplifier | |
8 | CHA2063A |
United Monolithic Semiconductors |
7-13GHz Low Noise Amplifier | |
9 | CHA2066 |
United Monolithic Semiconductors |
10-16GHz Low Noise Amplifier | |
10 | CHA2069 |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier | |
11 | CHA2069-99F |
United Monolithic Semiconductors |
18-31GHz Low Noise Amplifier | |
12 | CHA2069-FAA |
United Monolithic Semiconductors |
16-32GHz Low Noise Amplifier |