BUP314S - Siemens Semiconductor Group

BUP314S IGBT

BUP 314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 314S Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code C67040-A4207-A2 Pin 3 E VCE IC Package TO-218 AB 1200V 25A VCE VCGR.

Features

50 / 56 Unit - RthJC ≤ 0.42 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CES 1200 5.5 5.5 4.6 8 6.6 6.5 7.6 - V VGE = 0 V, IC = 0.3 mA, Tj = 25 °C Gate threshold voltage VGE(th) 4.5 VGE = VCE, IC = 0.35 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 30 A, Tj = 25 °C VGE = 15 V, IC = 30 A, Tj = 125 °C Zero gate voltage collector current ICES 0.8 m.