BUP311D - Infineon Technologies

BUP311D IGBT With Antiparallel Diode Preliminary data sheet

Infineon IGBT With Antiparallel Diode BUP 311D Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Pin 1 G Type BUP 311D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C O.

Features

1 Thermal Resistance Thermal resistance, junction - case Diode thermal resistance, chip case Symbol Values BUP 311D Unit °C - Tj Tstg - -55 ... + 150 -55 ... + 150 55 / 150 / 56 RthJC RthJCD ≤1 ≤ 2.5 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 3.4 4.3 6.5 3 3.7 - V VGE = VCE, IC = 0.3 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 8 A, Tj = 25 °C VGE = 15 V, IC = 8 A, Tj = 125 °C VGE = 15 V, IC = 16 A, Tj =.