BUP300 - Siemens Semiconductor Group

BUP300 IGBT

BUP 300 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 300 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67078-A4203-A2 Pin 3 E VCE IC Package TO-218 AB 1200V 3.6A VCE VCGR VGE.

Features

hJC ≤ 3.1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC = 0.1 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 1.5 A, Tj = 25 °C VGE = 15 V, IC = 1.5 A, Tj = 125 °C VGE = 15 V, IC = 1.5 A, Tj = 150 °C Zero gate voltage collector current ICES 25 100 µA VCE = 1000 V, VGE = 0 V, Tj = 25 °C VCE = 1000 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 100 nA VGE = 20 V, VCE = 0.