BUP 314D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 314D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4226-A2 Pin 3 E VCE IC P.
nce, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD ≤ 0.42 ≤ 0.83 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 - V VGE = VCE, IC = 0.35 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 25 A, Tj = 25 °C VGE = 15 V, IC = 25 A, Tj = 125 °C VGE = 15 V, IC = 42 A, Tj = 25 °C VGE = 15 V, IC = 42 A, Tj = 125 °C Zero gate voltage collector current ICES 0.8 mA nA 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUP314 |
Siemens Semiconductor Group |
IGBT | |
2 | BUP314S |
Siemens Semiconductor Group |
IGBT | |
3 | BUP311D |
Infineon Technologies |
IGBT With Antiparallel Diode Preliminary data sheet | |
4 | BUP312 |
Siemens |
IGBT | |
5 | BUP313 |
Siemens Semiconductor Group |
IGBT | |
6 | BUP313D |
Siemens Semiconductor Group |
IGBT | |
7 | BUP30 |
INCHANGE |
NPN Transistor | |
8 | BUP300 |
Siemens Semiconductor Group |
IGBT | |
9 | BUP302 |
Siemens Semiconductor Group |
IGBT | |
10 | BUP303 |
Siemens Semiconductor Group |
IGBT | |
11 | BUP304 |
Siemens Semiconductor Group |
IGBT | |
12 | BUP305 |
Siemens Semiconductor Group |
IGBT |