BUP 305 D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Pin 2 C Pin 3 E Type BUP 305 D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package TO-218 AB Ordering Code Q67040-A4225-A2 1200V .
Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 1 3.1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 6.5 3.3 4.3 V VGE = VCE, IC = 0.3 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 5 A, Tj = 25 °C VGE = 15 V, IC = 5 A, Tj = 125 °C Zero gate voltage collector current ICES 0.35 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 20 V, VCE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUP30 |
INCHANGE |
NPN Transistor | |
2 | BUP300 |
Siemens Semiconductor Group |
IGBT | |
3 | BUP302 |
Siemens Semiconductor Group |
IGBT | |
4 | BUP303 |
Siemens Semiconductor Group |
IGBT | |
5 | BUP304 |
Siemens Semiconductor Group |
IGBT | |
6 | BUP305D |
Siemens Semiconductor Group |
IGBT | |
7 | BUP306D |
Siemens Semiconductor Group |
IGBT | |
8 | BUP307 |
Siemens Semiconductor Group |
IGBT | |
9 | BUP307D |
Siemens Semiconductor Group |
IGBT | |
10 | BUP309 |
Siemens Semiconductor Group |
IGBT | |
11 | BUP311D |
Infineon Technologies |
IGBT With Antiparallel Diode Preliminary data sheet | |
12 | BUP312 |
Siemens |
IGBT |