Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
BUP 312 IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 312 VCE IC 1200V 12A Package TO-218 AB Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms TC .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUP311D |
Infineon Technologies |
IGBT With Antiparallel Diode Preliminary data sheet |
|
| 2 | BUP313 |
Siemens Semiconductor Group |
IGBT |
|
| 3 | BUP313D |
Siemens Semiconductor Group |
IGBT |
|
| 4 | BUP314 |
Siemens Semiconductor Group |
IGBT |
|
| 5 | BUP314D |
Siemens Semiconductor Group |
IGBT |
|
| 6 | BUP314S |
Siemens Semiconductor Group |
IGBT |
|
| 7 | BUP30 |
INCHANGE |
NPN Transistor |
|
| 8 | BUP300 |
Siemens Semiconductor Group |
IGBT |
|
| 9 | BUP302 |
Siemens Semiconductor Group |
IGBT |
|
| 10 | BUP303 |
Siemens Semiconductor Group |
IGBT |
|
| 11 | BUP304 |
Siemens Semiconductor Group |
IGBT |
|
| 12 | BUP305 |
Siemens Semiconductor Group |
IGBT |
|