·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC=6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector.
BO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 2V hFE-2 DC Current Gain IC= 5A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V MIN TYP. MAX UNIT 30 V 50 V 6 V 0.4 V 100 μA 100 μA 70 300 30 20 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without not.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUP300 |
Siemens Semiconductor Group |
IGBT | |
2 | BUP302 |
Siemens Semiconductor Group |
IGBT | |
3 | BUP303 |
Siemens Semiconductor Group |
IGBT | |
4 | BUP304 |
Siemens Semiconductor Group |
IGBT | |
5 | BUP305 |
Siemens Semiconductor Group |
IGBT | |
6 | BUP305D |
Siemens Semiconductor Group |
IGBT | |
7 | BUP306D |
Siemens Semiconductor Group |
IGBT | |
8 | BUP307 |
Siemens Semiconductor Group |
IGBT | |
9 | BUP307D |
Siemens Semiconductor Group |
IGBT | |
10 | BUP309 |
Siemens Semiconductor Group |
IGBT | |
11 | BUP311D |
Infineon Technologies |
IGBT With Antiparallel Diode Preliminary data sheet | |
12 | BUP312 |
Siemens |
IGBT |