BUP314S Siemens Semiconductor Group IGBT Datasheet, en stock, prix

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BUP314S

Siemens Semiconductor Group
BUP314S
BUP314S BUP314S
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Part Number BUP314S
Manufacturer Siemens Semiconductor Group
Description BUP 314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 314S Maximum Ratings Parameter Collector-emit...
Features 50 / 56 Unit - RthJC ≤ 0.42 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CES 1200 5.5 5.5 4.6 8 6.6 6.5 7.6 - V VGE = 0 V, IC = 0.3 mA, Tj = 25 °C Gate threshold voltage VGE(th) 4.5 VGE = VCE, IC = 0.35 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 30 A, Tj = 25 °C VGE = 15 V, IC = 30 A, Tj = 125 °C Zero gate voltage collector current ICES 0.8 m...

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