BSM300GA170DN2E3166 - Siemens Semiconductor Group

BSM300GA170DN2E3166 IGBT

BSM300GA170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 5.6 Ohm Type BSM300GA170DN2 E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package SINGLE SWITCH 1.

Features

up 1 Jul-31-1996 BSM300GA170DN2 E3166 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.8 5.5 3.4 4.6 2 8 6.2 3.9 5.3 V VGE = VCE, IC = 20 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 300 A, Tj = 25 °C VGE = 15 V, IC = 300 A, Tj = 125 °C Zero gate voltage collector current ICES 3 - mA VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 400 nA VGE = 20 V, VCE = 0 V AC Characteristics T.