BSM300GA120DN2E3166 - Siemens Semiconductor Group

BSM300GA120DN2E3166 IGBT

BSM300GA120DN2E3166 IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type BSM300GA120DN2E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package SINGLE SWITCH 1 Ordering Code C67070.

Features

BSM300GA120DN2E3166 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 4 16 6.5 3 3.7 V VGE = VCE, IC = 12 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 300 A, Tj = 25 °C VGE = 15 V, IC = 300 A, Tj = 125 °C Zero gate voltage collector current ICES 5.6 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 320 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs.