SiC Power Module BSM300D12P3E005 Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 7 9 8 Features 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. 6 5 10 NTC 11 Datasheet 1 3,4 2 Construction This product is a half bridge m.
1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. 6 5 10 NTC 11 Datasheet 1 3,4 2 Construction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/10 12.Mar.2019 - Rev.001 BSM300D12P3E005 Datasheet Absolute maximum ratings (Tj = 25°C) Parameter Symbol Conditions Drain - Source Voltage VDSS G-S short Gate - Source Voltage (+) VGSS D-S short Gate - Source Voltage (-) G - S Voltage (tsurge<300nsec) D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM300D12P2E001 |
ROHM |
SiC | |
2 | BSM300GA120DLC |
eupec GmbH |
IGBT-Modules | |
3 | BSM300GA120DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
4 | BSM300GA170DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
5 | BSM300GAL120DLC |
eupec GmbH |
IGBT-Module | |
6 | BSM300GB120DLC |
Infineon |
IGBT-Modules | |
7 | BSM300GB120DLC |
eupec GmbH |
IGBT-Modules | |
8 | BSM30GP60 |
eupec GmbH |
Elektrische Eigenschaften / Electrical properties | |
9 | BSM35GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
10 | BSM35GD120D2 |
Siemens Semiconductor Group |
IGBT | |
11 | BSM35GD120D2 |
Siemens Semiconductor |
IGBT Power Module | |
12 | BSM35GD120DN2 |
Eupec GmbH |
IGBT Power Module |