Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom Grenzeffektivwert RMS forward current per chip www.DataShe.
lrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral 2 I t - value Tc = 80 °C tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125°C IF IFRM 2 It VCES Tc = 80 °C TC = 25 °C tP = 1 ms, TC = 25°C T C = 80 °C IC,nom. IC ICRM Ptot VGES 600 30 50 60 180 +/- 20V V A A A W V 30 60 240 A A A2s Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM300D12P2E001 |
ROHM |
SiC | |
2 | BSM300D12P3E005 |
ROHM |
SiC Power Module | |
3 | BSM300GA120DLC |
eupec GmbH |
IGBT-Modules | |
4 | BSM300GA120DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
5 | BSM300GA170DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
6 | BSM300GAL120DLC |
eupec GmbH |
IGBT-Module | |
7 | BSM300GB120DLC |
Infineon |
IGBT-Modules | |
8 | BSM300GB120DLC |
eupec GmbH |
IGBT-Modules | |
9 | BSM35GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
10 | BSM35GD120D2 |
Siemens Semiconductor Group |
IGBT | |
11 | BSM35GD120D2 |
Siemens Semiconductor |
IGBT Power Module | |
12 | BSM35GD120DN2 |
Eupec GmbH |
IGBT Power Module |