www.DataSheet4U.com BSM 35 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 35 GD 120 DN2 BSM35GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = .
ct-20-1997 www.DataSheet4U.com BSM 35 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage VGE = VCE, IC = 1.2 mA Collector-emitter saturation voltage VGE = 15 V, IC = 35 A, Tj = 25 °C VGE = 15 V, IC = 35 A, Tj = 125 °C Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current VGE = 20 V, VCE = 0 V AC Characteristics Transconductance VCE = 20 V, IC = 35 A Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Output capac.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM35GD120DN2E3224 |
Eupec GmbH |
IGBT Modules | |
2 | BSM35GD120D2 |
Siemens Semiconductor Group |
IGBT | |
3 | BSM35GD120D2 |
Siemens Semiconductor |
IGBT Power Module | |
4 | BSM35GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
5 | BSM35GP120 |
Eupec GmbH |
IGBT-Module | |
6 | BSM300D12P2E001 |
ROHM |
SiC | |
7 | BSM300D12P3E005 |
ROHM |
SiC Power Module | |
8 | BSM300GA120DLC |
eupec GmbH |
IGBT-Modules | |
9 | BSM300GA120DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
10 | BSM300GA170DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
11 | BSM300GAL120DLC |
eupec GmbH |
IGBT-Module | |
12 | BSM300GB120DLC |
Infineon |
IGBT-Modules |