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BSM300GA170DN2E3166 |
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| Part Number | BSM300GA170DN2E3166 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM300GA170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 5.6 Ohm Type ... |
| Features |
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1
Jul-31-1996
BSM300GA170DN2 E3166
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.8 5.5 3.4 4.6 2 8 6.2 3.9 5.3
V
VGE = VCE, IC = 20 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 300 A, Tj = 25 °C VGE = 15 V, IC = 300 A, Tj = 125 °C
Zero gate voltage collector current
ICES
3 -
mA
VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
400
nA
VGE = 20 V, VCE = 0 V
AC Characteristics T... |
| Document |
 BSM300GA170DN2E3166 Data Sheet
PDF 124.78KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | BSM300GA120DLC |
eupec GmbH |
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| 2 | BSM300GA120DN2E3166 |
Siemens Semiconductor Group |
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| 3 | BSM300GAL120DLC |
eupec GmbH |
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| 4 | BSM300GB120DLC |
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| 5 | BSM300GB120DLC |
eupec GmbH |
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