BSM300GA120DN2E3166 |
Part Number | BSM300GA120DN2E3166 |
Manufacturer | Siemens Semiconductor Group |
Description | BSM300GA120DN2E3166 IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type BSM300GA120DN2E3166 M... |
Features |
BSM300GA120DN2E3166
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 4 16 6.5 3 3.7
V
VGE = VCE, IC = 12 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 300 A, Tj = 25 °C VGE = 15 V, IC = 300 A, Tj = 125 °C
Zero gate voltage collector current
ICES
5.6 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
320
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs... |
Document |
BSM300GA120DN2E3166 Data Sheet
PDF 126.78KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSM300GA120DLC |
eupec GmbH |
IGBT-Modules | |
2 | BSM300GA170DN2E3166 |
Siemens Semiconductor Group |
IGBT | |
3 | BSM300GAL120DLC |
eupec GmbH |
IGBT-Module | |
4 | BSM300GB120DLC |
Infineon |
IGBT-Modules | |
5 | BSM300GB120DLC |
eupec GmbH |
IGBT-Modules |