BSM150GT120DN2 - Siemens Semiconductor Group

BSM150GT120DN2 IGBT

BSM 150 GT 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 150 GT 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package TRIPACK Ordering Code C67070-A2.

Features

150 GT 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 2 8 6.5 3 3.7 V VGE = VCE, IC = 6 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 150 A, Tj = 25 °C VGE = 15 V, IC = 150 A, Tj = 125 °C Zero gate voltage collector current ICES 2.8 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 320 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 62 10 .