BSM151 - Siemens Semiconductor Group

BSM151 IGBT

SIMOPAC® Module BSM 151 VDS = 500 V ID = 48 A R DS(on) = 0.12 Ω q q q q q q Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type BSM 151 Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-A1004-A2 Symbol Values 500 500 ± 20 48 192 – 55 … + 150 625 ≤ 0..

Features

/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 44 03.96 BSM 151 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VDS = VGS, ID = 1 mA Zero gate voltage drain current VDS = 500 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 30 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max., ID = 30 A Input capacitance VGS = 0, VD.