BSM150GB120DN2 - Siemens Semiconductor Group

BSM150GB120DN2 IGBT

BSM 150 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 150 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package HALF-BRIDGE 2 Ordering Code C67076-A2108-A70 1200V 210A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC .

Features

tics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 2 8 6.5 3 3.7 V VGE = VCE, IC = 6 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 150 A, Tj = 25 °C VGE = 15 V, IC = 150 A, Tj = 125 °C Zero gate voltage collector current ICES 2.8 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 320 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 62 11 1.6 0.6 - S nF - VCE = 20 V, IC = 15.