BSM150GB170DN2 - Siemens Semiconductor Group

BSM150GB170DN2 IGBT

BSM 150 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type BSM 150 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package HALF-BRIDGE 2 Ordering Code C67070-A2704-.

Features

B 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.8 5.5 3.4 4.6 1 4 6.2 3.9 5.3 V VGE = VCE, IC = 10 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 150 A, Tj = 25 °C VGE = 15 V, IC = 150 A, Tj = 125 °C Zero gate voltage collector current ICES 1.5 - mA VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 400 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 54 20 2 .