BSM150GAL120DN2E3166 - Siemens Semiconductor Group

BSM150GAL120DN2E3166 IGBT

BSM150GAL120DN2E3166 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM150GAL120DN2E3166 1200V 210A Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage HALF BRIDGE GAL 2 C67076-A2112-A70 Symbol Values 1200 .

Features

RTHJCDC Vis - Semiconductor Group 1 Nov-08-1996 BSM150GAL120DN2E3166 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 2 8 6.5 3 3.7 V VGE = VCE, IC = 6 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 150 A, Tj = 25 °C VGE = 15 V, IC = 150 A, Tj = 125 °C Zero gate voltage collector current ICES 2.8 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 320 nA VGE = 20 V,.